A solid-state CCD image sensor according to the invention has a vertical overflow drain structure as well as a plurality of photodiodes (6) for photoelectric conversion and a plurality of charge-coupled devices for signal-charge transfer. This solid-state image sensor respectively contains a first well (2) for covering one of the photodiodes (6) and a second well (3) for covering a CCD channel region (4), which has a depth which is smaller than that of the first well region (2). The second well (3) is used for isolating the CCD channel region (4) from a semiconductor substrate (1) at least in a pixel or image-point region and can be replaced by a buried layer which has the opposite conductivity from the semiconductor substrate (1) and has a high concentration. The first well (2) can cover the entire pixel region below the CCD channel region (4) and zonally have only a small depth. What is essentially important is that the substrate (1) extends between the respective photodiodes (6) towards the second well (3). The solid-state image sensor according to the invention has improved image qualities, in particular a low degree of smearing (blurring) and shine or glare. <IMAGE>
