发明名称 Method and device for plasma-activated vapour deposition
摘要 The object is to achieve a high deposition rate for a long time and in a stable manner, in order to apply preferably reactive layers of electrically insulating compounds. It is intended to regulate and keep constant the reactivity, the energetic activation and the layer composition and structure by influencing the plasma density. According to the invention, the vapour spreading from the evaporator passes through a plasma produced between electrodes and is caused to interact with the said plasma. The electrodes comprise evaporation material or a component and/or doping material of the layer to be applied. The plasma is maintained in the vapour of the evaporation material and/or inert gas. The method is used for the surface refinement (improvement) of semi-finished products and finished parts, in particular for oxide layers having a barrier effect on plastic films for the packaging industry. <IMAGE>
申请公布号 DE4343042(C1) 申请公布日期 1995.03.09
申请号 DE19934343042 申请日期 1993.12.16
申请人 FRAUNHOFER-GESELLSCHAFT ZUR FOERDERUNG DER ANGEWANDTEN FORSCHUNG E.V., 80636 MUENCHEN, DE 发明人 KIRCHHOFF, VOLKER, 01324 DRESDEN, DE;GOEDICKE, KLAUS, 01307 DRESDEN, DE;NEUMANN, MANFRED, DR., 01277 DRESDEN, DE;RESCHKE, JONATHAN, 01067 DRESDEN, DE;SCHILLER, SIEGFRIED, PROF. DR., 01324 DRESDEN, DE
分类号 H05H1/46;C23C14/22;C23C14/32;C23C14/34;(IPC1-7):C23C14/32;C23C14/08;H01J37/32 主分类号 H05H1/46
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