发明名称 HIGH VOLTAGE GENERATOR OF SEMICONDUCTOR MEMORY ELEMENT
摘要 The invention is to decrease leakage current which flows from high voltage terminal (Vpp) to earth terminal (Vss) in the sensing circuit of high voltage generator. The level sensor of the generator consists of transistors (M11,M12,M13), resistance (R2), nodes (N3,N4), and inverting gate (G2). If high voltage (Vpp) is higher than supplying voltage (Vcc) by an amount of threshold voltage, the transistor (M11) is turned on and the supply of current is started. Low sensing current flows from high voltage terminal (Vpp) to earth voltage terminal (Vss) and high drive current flows from high voltage terminal (Vpp) to supplying voltage terminal (Vcc) through resistance (R2). Therefore, power consumption is decreased.
申请公布号 KR950002024(B1) 申请公布日期 1995.03.08
申请号 KR19920002347 申请日期 1992.02.18
申请人 HYUNDAI ELECTRONICS CO., LTD. 发明人 OH, JONG - HUN
分类号 G11C11/407;(IPC1-7):G11C11/407 主分类号 G11C11/407
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