| 摘要 |
PURPOSE:To detect a mark with high precision by removing both a positive resist and a negative resist on the mark in resist exposure using convergent ion beams. CONSTITUTION:When a superposing positional mark formed onto the surface of a sample is irradiated with convergent ion beams and the position of the mark is sensed in resist exposure employing convergent ion beams, a positive resist 12 on the mark is gotten rid of through beam exposure, electron beam exposure or ion beam exposure in the positive resist 12, and the mark is sensed. Only a resist 23 containing silicon as an upper layer is applied onto the mark by using two-layer resist structure in a negative resist, and the mark is sensed. The thin resist 23 containing silicon in approximately 0.2mum is applied onto the mark, thus detecting the mark by ion beams. |
