| 摘要 |
<p>A method of crystal growing a semiconductor thin film by MOCVD method comprises, while conducting doping with utilizing material whose carrier concentration is regulated by its decomposition speed, selectively irradiating ultraviolet rays to the material before the material reaches a substrate or a transition layer thereon, whereby the decomposition speed of the material on the substrate or the transition layer are increased. A crystal growth apparatus for growing a semiconductor thin film utilizing MOCVD method includes a first gas inlet for introducing material comprising alkyl group or hydride, doping material whose carrier concentration is regulated by its transportation speed, and a carrier gas such as hydrogen, a second gas inlet introducing doping material whose carrier concentration is regulated by its decomposition speed, which is made of a material transparent to ultraviolet rays so that ultraviolet rays transmit confined in the transparent material, and convex portions, concave portions, or portions having different refractive indices provided at the internal wall of the second gas inlet so that ultraviolet rays leak out to the inside of a reaction tube at those portions.</p> |
