LIGHT EMITTING DIODE AND ITS MANUFACTURE

摘要

PURPOSE:To avoid deformation of a metal lead frame and obtain a light emitting diode having excellent transparency and heat-resistance and adhesiveness by a method wherein a semiconductor chip which is mounted on the metal lead frame is sealed with specific polyethersulfone resin. CONSTITUTION:A semiconductor chip mounted on a metal lead frame is sealed with polyethersulfone resin composition which is composed of 90-99.9wt. parts of polyethersulfone resin and 10-0.1wt. parts of phthalic acid mixed group ester and has a melt flow index of 20-0120g/10min. at 320 deg.CX2.16kg. As an experiment, polyethersulfone resin whose melt flow index was 5.0g/min. at 320 deg.CX2.16kg and butyl benzyl phthalate was mixed by dry-blending and subjected to melting extrusion at 330 deg.C and pellets whose melt flow index was 38.6g/10min. could be obtained. The semiconductor chips were sealed by using a mold in which the semiconductor chips were inserted at a molding temperature of 120 deg.C and under an injection pressure of 500kg/cm<2>.