发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT
摘要 PURPOSE:To reduce the number of elements of high breakdown strength of a driving circuit to reduce the chip size and cost and also to relax restrictions on circuit constitution by setting the common potential as the reference potential of the drive circuit to the same potential as an output terminal. CONSTITUTION:The supply voltage applied to a power terminal 15 is raised by a bootstrap circuit 19 and is supplied as the operating power of a drive circuit 18, and the common potential to be the reference potential is set to the same potential as an output terminal 14. At this time, the boosted power source is made such voltage that the drive control signal output can be drive an output switch element 17. Thus, elements of low breakdown strength can be used to constitute the drive circuit, and the number of used elements of high breakdown strength is reduced to prevent the increase of the chip size and the rise of the cost.
申请公布号 JPH0758615(A) 申请公布日期 1995.03.03
申请号 JP19930201548 申请日期 1993.08.13
申请人 TOSHIBA CORP;TOSHIBA MICRO ELECTRON KK 发明人 SANO YOSHIYUKI
分类号 H01L21/8249;H01L27/06;H03K17/08;H03K17/695 主分类号 H01L21/8249
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