发明名称 MEASURING TRANSISTOR EXCLUSIVELY FOR CHARACTERISTIC, CHARACTERISTIC INSPECTING METHOD, AND LIQUID CRYSTAL DISPLAY PANEL
摘要 <p>PURPOSE:To obtain the transistor(TR) which inspect the characteristics of a thin film transistor(TFT) constituting the liquid crystal panel as to the improvement of the measuring TR exclusively for the characteristics and to accurately grasp characteristics to be inspected even at the time of the formation of a thin film transistor substrate or after the processing of the display panel. CONSTITUTION:The measuring TR 14 exclusively for the characteristics is composed of a TFT, and respective inspection terminals 41-46 for its source, drain, and gate are surrounded with a conductive material 413, which is connected to a peripheral common line 15. Its drain lead-out electrode 49, gate lead-out electrode 48, and source lead-out electrodes 47 and 410 are electrically connected to the local common line 412, which is electrically connected to the peripheral common line 15. Further, its drain and gate are electrically connected. Its source, drain, and gate, and parts of the respective drain lead-out electrode 49, gate lead-out electrode and source lead-out electrodes 47 and 410 are provided inside a seal 13 which sections the liquid crystal of the liquid crystal panel.</p>
申请公布号 JPH0756192(A) 申请公布日期 1995.03.03
申请号 JP19930204358 申请日期 1993.08.18
申请人 FUJITSU LTD 发明人 SANADA TATSUYUKI
分类号 G02F1/1343;G02F1/13;G02F1/136;G02F1/1365;G02F1/1368;H01L21/66;H01L29/78;H01L29/786;(IPC1-7):G02F1/136;G02F1/134 主分类号 G02F1/1343
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