| 摘要 |
PURPOSE:To obtain a resist material fit for fine working with far UV, KrF or ArF eximer laser light, electron beams, X-rays, etc., by using a high molecular compd. contg. ladder type polysiloxane in each of repeating units. CONSTITUTION:This resist material contains a high molecular compd. contg. ladder type polysiloxane represented by the general formula in each molecule. In the formula, each of R<1> and R<2> is 1-10C satd. alkyl, R<3> is a tetravalent arom. hydrocarbon group or a tetravalent 4-7C cyclic satd. hydrocarbon group and each of R<4>-R<7> is H or trimethylsilyl. The silicon-contg. high molecular compd. is useful as the base polymer of a photoresist because the solubility of the compd. to a solvent is varied when the compd. is irradiated with radiation such as far UV in combination with an optical acid generating agent. When this resist material is used as the upper resist of a multilayered resist, high resistance to oxygen plasma etching is ensured because of the high Si content and a pattern can precisely be transferred to the lower resist. |
