| 摘要 |
PURPOSE:To prevent the thermal deformation of inner leads at the time of wiring bonding. CONSTITUTION:A semiconductor device manufacturing method includes a process for heating a metallic ball 4 formed at the front end of a wire 2 and an electrode 6 formed on an IC chip 5 with a laser beam 12 emitted from a laser oscillator 11, and, at the same time, for joining the ball 4 to the electrode 6 by applying ultrasonic waves and a load and another process for heating the middle part of the wire 2 and an inner lead 7 with the laser beam 12 from the laser oscillator 11 and, at the same time, for joining the middle part of the wire 2 to the inner lead 7 by applying ultrasonic waves and a load. |
