| 摘要 |
PURPOSE: To obtain an inexpensive photoelectric cell device having high conversion efficiency by cooling a saturated solution containing a semiconductor material in order to deposit a first semiconductor on a substrate, cooling a second saturated solution in order to deposit a second semiconductor on the first semiconductor deposited on the substrate and repeating the steps. CONSTITUTION: A first semiconductor, preferably, silicon is deposited from a metallic solution saturated with a semiconductor material in order to form an absorption layer 14. Tin is preferably employed as a solvent and silicon is deposited on a barrier 12 from a first molten tin. Growth of silicon on the barrier 12 is accelerated by cooling the molten. Similarly, a collector layer 16 is formed on the first semiconductor layer using a second molten of tin and silicon. More specifically, first and second saturated solutions are cooled, a substrate is removed from the growing solution, both saturated solutions are heated for 5-15 min, the solution is supplemented and equilibrium state is reestablished before resuming the growth procedure. |
