| 摘要 |
PURPOSE: To eliminate crosstalk between adjacent lasers under operation or reduce crosstalk sufficiently as compared with an existing apparatus by locating the major part of a trench in the depth direction within a substrate. CONSTITUTION: First and second active regions 31, 32 corresponding to first and second lasers 11, 12 are provided in an active layer 3 and the electrical connecting means for the lasers 11, 12 comprises a thin InGaP intermediate layer 5, first and second P type GaAs contact layers 6, 7, and a connecting conductor 8. The lasers 11, 12 are isolated by a trench 20 extending from the surface 13 of a semiconductor body 10 into the substrate 1 wherein the depth at the major part (d) in the depth D of the trench 20 is set at about 4μm so that about half of the major part (d) is located in the substrate 1 and the thickness of the semiconductor layer structure is set at about 3μm similarly to actual case. The lasers 11, 12 are electrically isolated sufficiently by extending the trench 20 in the substrate 1 and crosstalk between the lasers 11, 12 can be suppressed.
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