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发明名称
METHOD FOR FORMING TRENCH IN SUBSTRATE FOR SMART POWER CHIP
摘要
申请公布号
JPH0758196(A)
申请公布日期
1995.03.03
申请号
JP19940180672
申请日期
1994.07.08
申请人
SIEMENS AG
发明人
UDO SHIYUWARUKE
分类号
H01L21/316;H01L21/74;H01L21/76;H01L21/762;(IPC1-7):H01L21/76
主分类号
H01L21/316
代理机构
代理人
主权项
地址
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