| 摘要 |
PURPOSE:To realize positional relations with reciprocal photomasks in respective exposing stages with extremely high accuracy in light patterning of photolithography. CONSTITUTION:This photomask is composed of plural photomasks 1A, 1B having prescribed patterns varying from each other. The respective photomasks are have patterns 1a, 1b for positioning and patterns for high-accuracy positioning. The patterns for high-accuracy positioning have >=1 straight patterns 1c, 1g and scale patterns 1k, 1m, 1o, 1q formed in >=1 respectively in two directions orthogonal with each other. The straight patterns 1a, 1b are so formed as to overlap on each other by each prescribed combination of the photomasks. The scale patterns are so formed that the scale patterns 1k, 1m formed on the photomask 1A and the scale patterns 1o, 1p formed on the photomask 1B for each of the prescribed combinations of the photomasks have a relation of a main scale and vernier of vernier calipers with each other. |
