| 摘要 |
<p>PURPOSE:To automatically perform control such as continuation and stop of writing by discriminating a state of memory cells for every data line in a nonvolatile memory. CONSTITUTION:This device is provided with a memory cell array in which nonvolatile semiconductor memory cells M1-M5 are arranged in an array state, word lines W1, W2 to which control gates of plural memory cell groups (sector) are connected in common, and data lines D1, D2 to which drains of plural memory cells are connected in common. And a pre-charge control circuit PCC, a sense amplifier circuit SAC, and a detecting circuit ALLC for a memory cell state are provided for each data line. Batch rewriting is performed for the memory cell (sector) connected to the same word line. A state of memory cell is read out collectively in whole data lines during rewriting operation, the continuation and stop for rewriting operation can be controlled based on this information in only the inside of a device.</p> |
