| 摘要 |
PURPOSE:To provide a capacitor whose capacity is large capacitance and small leakage current having a long time-dependent dielectric-breakdown(TDDB) life. CONSTITUTION:Before a Ta2O5 film 16 as a capacitor insulating film is formed, a thin SiN film 14 is formed on a lower-part electrode 13a by a polysilicon film. After that, the surface of the SiN film 14 is oxidized, and an extremely thin SiO2 film 15 is formed. After that, the Ta2O5 film 16 is formed. The extremely thin SiO2 film 15 suppresses the reaction of the SiN film 14 with the Ta2O5 film 16 against a high-temperature heat treatment, it reduces a leakage current, and it functions so as to make a TDDB life long. |
