| 摘要 |
PURPOSE:To improve softerror-resistance without lowering write characteristics. CONSTITUTION:The SRAM memory cell is composed of a flip-flop 4 which is formed by a first inverter pattern 2 and a second inverter 3, the first word transistor 18 which is connected to the first inverter 2 through the intermediary of the first memory node 17, and the second word transistor 23 which is connected to the second inverter 3 through the intermediary of the second memory node 22. The series-connected first diode 25 and the first capacitor 26 are connected to the first memory node 17, and the series-connected second diode 27 and the second capacitor 28 are connected to the second memory node 22. |
