Method for producing a dielectric and system for carrying it out

摘要

In the case of coating semiconductor components with a dielectric material it is known, for the purpose of planarisation, to carry out a thermal treatment that causes melting or to use O3-TEOS and O3-HMDS oxide layers. Before the latter are applied, a PECVD oxide layer can be applied in known fashion onto an underlying aluminium layer and treated with a plasma. A method for producing a dielectric is proposed, in which a dielectric material is used, the deposition rate of which is varied by the electrical polarity of an underlying layer, the underlying layer being subjected beforehand to a suitable surface-treatment in order to produce the desired electrical polarities. By exploiting the deposition rate which varies depending on the electrical polarity, a highly planar dielectric can be obtained even on very uneven topographies, without high temperatures being required for this purpose. A CVD system with a DC voltage source connected between a wafer holder and a gas inlet part is suitable for carrying out the method. Use, for example, in the production of semiconductor components. <IMAGE>