Capacitor for a dynamic random-access memory (direct-access memory) and method for producing the same

摘要

A DRAM capacitor and a method for producing the same are described, which are capable of producing an increased surface region and thereby an increased capacitance, whilst the topology is reduced, in that a line layer is formed in a simple fashion as a charge-storage electrode which consists of line spacers in the region of a two-layer pin-shaped line layer pattern or of a combination of a central line layer pattern and an outer line layer pattern that has an upwardly open dome structure enclosing the central line layer pattern, by the use of an etching rate difference between insulating films.