Method for forming a fine pattern in a semiconductor device

摘要

Method for forming a fine pattern in a semiconductor device, comprising the steps of: providing a target material layer, to be provided with a pattern and to be covered with a photosensitive film, on the upper side of the semiconductor substrate, selective exposure of the surface of the photosensitive film to define a region in the surface of the photosensitive film which is to be provided with a pattern, diffusing silicon into the surface of the photosensitive film by using hexamethyldisilane (HMDS) or tetramethyldisilane (TMDS) for forming a uniformly thin silanised photosensitive material film on a non-exposed surface of the photosensitive film and a thick silanised photosensitive material film in the form of a convex lens on the exposed surface of the photosensitive film, etching the silanised photosensitive material layer and the photosensitive film with a plasma that contains NF3/O2 with a predetermined thickness for removing the edge of the convex lens-shaped silanised photosensitive material in order to form a silanised photosensitive material pattern which defines in finely formed fashion the region to be provided with a pattern, and anisotropic etching of the photosensitive film exposed through the silanised photosensitive material pattern with an oxygen-based plasma for selective exposure of the ... Original abstract incomplete.