Method and device for etching thin films, preferably indium tin oxide films

摘要

In the case of a device for etching thin films, preferably indium tin oxide films on glass substrates in a vacuum chamber (2), with a plasma source (12) arranged above the latter, a substrate holder (5) opposite this source and a radio-frequency source (8) connected to the substrate holder (5), Cl2 or Cl2 and H2 or CH4 can be introduced as etching gas into the vacuum chamber (2), the radio-frequency bias supply (8, 9) of the substrate holder (5) being adjustable independently of the etching particle density and the plasma source (12) being supplied by a separate radio-frequency source (16) which has its own matching network (17). <IMAGE>