发明名称 POSITIVE TYPE ELECTRON BEAM RESIST
摘要 PURPOSE:To provide an electron beam resist having high sensitivity and high resolution and excellent in adhesion and dry etching resistance. CONSTITUTION:This positive type electron beam resist consists of poly(2- cyanoacrylate) and ketone resin. When this resist is used, a resist pattern having high sensitivity and high resolution and excellent in adhesion and dry etching resistance can be formed and a significant effect of enhancing productivity and quality can be produced in the production of a photomask, LSI or superLSI.
申请公布号 JPH0756341(A) 申请公布日期 1995.03.03
申请号 JP19930226611 申请日期 1993.08.20
申请人 TOAGOSEI CO LTD;TOPPAN PRINTING CO LTD 发明人 SATO MITSUYOSHI;OKUYAMA TOSHIO;TAMURA AKIRA;YONEZAWA MASAJI
分类号 G03F7/027;G03F7/032;G03F7/039;H01L21/027;(IPC1-7):G03F7/039 主分类号 G03F7/027
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