发明名称 |
POSITIVE TYPE ELECTRON BEAM RESIST |
摘要 |
PURPOSE:To provide an electron beam resist having high sensitivity and high resolution and excellent in adhesion and dry etching resistance. CONSTITUTION:This positive type electron beam resist consists of poly(2- cyanoacrylate) and ketone resin. When this resist is used, a resist pattern having high sensitivity and high resolution and excellent in adhesion and dry etching resistance can be formed and a significant effect of enhancing productivity and quality can be produced in the production of a photomask, LSI or superLSI. |
申请公布号 |
JPH0756341(A) |
申请公布日期 |
1995.03.03 |
申请号 |
JP19930226611 |
申请日期 |
1993.08.20 |
申请人 |
TOAGOSEI CO LTD;TOPPAN PRINTING CO LTD |
发明人 |
SATO MITSUYOSHI;OKUYAMA TOSHIO;TAMURA AKIRA;YONEZAWA MASAJI |
分类号 |
G03F7/027;G03F7/032;G03F7/039;H01L21/027;(IPC1-7):G03F7/039 |
主分类号 |
G03F7/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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