| 摘要 |
A semiconductor device is formed to have spaced inner conduction lines (1, 2, 3) and shield conduction lines (a, b) each arranged between adjacent ones of the inner conduction lines (1, 2, 3). A shield plate (6) is in electrical contact with the shield conduction lines (a, b) and connected to ground. The shield conduction lines (a, b) and the shield plate (6) are effective to shield a coupling capacitance formed due to increased integration of the inner conduction lines (1, 2, 3). Thus, generation of noise is prevented, as is erroneous operation of the chip even when variations in voltage between adjacent inner conduction lines occur. In another embodiment, the device has upper and lower shield plates (16, 17 - Fig. 3B, not shown). <IMAGE> |
