| 摘要 |
Purpose: To realize a type of thin film with excellent embedding characteristics, good control of thin film thickness, low dielectric constant, very low hygroscopicity, and excellent compressive stress. Configuration: A first formation layer (L1) with excellent compressive stress is formed from the TEOS gas using the PECVD method; a second formation layer (L2) with a lower compressive stress yet excellent embedding characteristics, low dielectric constant, and other excellent properties is formed from a gas mixture of TEOS gas and halogen gas using the PECVD method; these first and second formation layers (L1, L2) are combined appropriately to form a laminate configuration made of several layers laminated to each other. <IMAGE> |
