发明名称 Method of and apparatus for manufacturing various kinds of gases to be supplied to semiconductor manufacturing factories
摘要 <p>PCT No. PCT/JP94/00676 Sec. 371 Date Feb. 9, 1995 Sec. 102(e) Date Feb. 9, 1995 PCT Filed Apr. 22, 1994 PCT Pub. No. WO94/24501 PCT Pub. Date Oct. 27, 1994Disclosed is a production process and apparatus of high-purity air and various air material gases for semiconductor production factories that, together with enabling the production of high-purity air, also enables the production high-purity nitrogen simultaneous to the production of oxygen-rich air as the finished product. This is accomplished by compressing feed air to a pressure of 3 to 10 kg/cm2G, introducing this compressed air into a catalyst tower (8) to convert the carbon monoxide, hydrocarbons and hydrogen contained in the feed air into carbon dioxide and water, and introducing the purified air into an adsorption tower (12a) or (12b) after cooling the heated air following catalytic reaction to remove carbon dioxide, water and other minute amounts of impurities by adsorption. A portion of the resulting purified air is removed as product high-purity air, while the remainder is introduced into a main heat exchanger (18) where it is cooled to substantially the liquefaction temperature. After cooling, the air is introduced into a single rectification tower (19) followed by liquefaction rectification. High-purity nitrogen is then removed from the top of said single rectification tower which is then obtained as product high-purity nitrogen after going through the main heat exchanger (18). On the other hand, oxygen-rich liquefied air is drawn out from the bottom of the single rectification tower (19). This oxygen-rich liquefied air is then introduced into a condenser-evaporator. (24) where it is vaporized and then drawn out. This drawn out air is then introduced into the main heat exchanger (18) where it is heated to an intermediate temperature and then removed. This oxygen-rich air is then introduced into an expansion turbine (35) where it is expanded and lowered in temperature. After generation of cold, the cold is recovered followed by obtaining of the product gas in the form of purified oxygen-rich air.</p>
申请公布号 GB9426063(D0) 申请公布日期 1995.03.01
申请号 GB19940026063 申请日期 1994.04.22
申请人 NIPPON SANSO CORPORATION 发明人
分类号 B01D53/04;B01D53/26;C01B13/02;C01B21/04;F25J3/04;F25J3/08;H01L21/673;H01L21/677 主分类号 B01D53/04
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