| 发明名称 |
Manufacturing method of semiconductor device and thin film transistor with a recrystallized thin semiconductor film. |
| 摘要 |
A semiconductor device, e.g. a TFT, is made by recrystallizing a thin silicon film (4) the thickness of which is comprised between 50 ANGSTROM and 250 ANGSTROM , deposited on a light fermeable substrate (1). The recrystallizing step is a excimer laser one. <IMAGE> |
| 申请公布号 |
EP0641018(A1) |
申请公布日期 |
1995.03.01 |
| 申请号 |
EP19940113082 |
申请日期 |
1994.08.22 |
| 申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
YOSHIOKA, TATSUO;TETSUYA, KAWAMURA;FURUTA, MAMORU;MIYATA, YUTAKA |
| 分类号 |
H01L21/265;H01L21/20;H01L21/324;H01L21/336;H01L29/78;H01L29/786 |
主分类号 |
H01L21/265 |
| 代理机构 |
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