| 摘要 |
PURPOSE:To obtain a sputtering target of high quality stably providing an ITO film excellent in electrical conductivity and light transmissivity by incorporating Mn into an ITO sintered body constituted of indium oxide and tin oxide and regulating its density into a specified high one. CONSTITUTION:In an ITO sintered body constituted of indium oxide and tin oxide with Sn by about 1-20wt.% (expressed in terms of Sn), about 5 to 5000ppm Mn is incorporated, and its density is regulated to 90-100%. This sintered body is obtd. By compacting a raw material powder mixture having a specific compsn. by a die compacting method or the like, subjecting the green compact to pressurizing treatment by cold hydrostatic pressing under a pressure of about 3-5t/cm<2> and thereafter executing sintering at about 1250-1600 deg.C. By executing sputtering using the ITO sintered body as a target, a transparent conductive film having low resistance and high transparency is formed on a high temp. and low temp. substrate at a high film forming rate. At that time, the formation of granular material, cracking, the scattering of broken grains on the surface do not occur in the target. |
