| 摘要 |
Method of magnetron sputtering, where a volume over the sputtered cathode surface is affected by a magnetic field and the field lines of the said magnetic field, which intersect the cathode surface twice, are spread on an area greater than 80 % of the total cathode surface area. The extinction pressure has a value greater than or equal to 1.5*10<-2> Pa. Selected materials can be sputtered at the discharge power density of the cathode in the interval 2 to 250 W/cm<2> in a stable selfsputtering discharge, excited in the atmosphere of the sputtered atoms or in the mixture of the sputtered atoms with the working gas at pressures even lower than 1.5*10<-2> Pa. Described are methods of discharge ignition and of adjustment of its characteristics by means of the magnetic field and other parameters. The method can be realized in a device for magnetron sputtering with a defined sputtered cathode surface consisting of an effective cathode area occupying at least 80 % of the total sputtered cathode surface, of a central cathode area and of a marginal cathode area. Various cathode shapes and magnetic field supplies are described. |
