发明名称 |
Charge pump circuit having an improved charge pumping efficiency |
摘要 |
A charge pump circuit includes a P channel field effect transistor, a diode-connected N channel field effect transistor between a first node and a second node. The P channel field effect transistor operates in response to a first clock signal applied through a first capacitor to discharge the first node to a ground potential. The first node receives a second clock signal through a second capacitor. Negative electric charges are pumped out to the second node. A negative bias voltage is generated from the second node with an improved efficiency and reliability.
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申请公布号 |
US5394365(A) |
申请公布日期 |
1995.02.28 |
申请号 |
US19930045069 |
申请日期 |
1993.04.12 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
TSUKIKAWA, YASUHIKO |
分类号 |
H01L21/8238;G11C5/14;G11C11/408;H01L27/02;H01L27/092;H02M3/07;(IPC1-7):G11C5/14 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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