发明名称 Charge pump circuit having an improved charge pumping efficiency
摘要 A charge pump circuit includes a P channel field effect transistor, a diode-connected N channel field effect transistor between a first node and a second node. The P channel field effect transistor operates in response to a first clock signal applied through a first capacitor to discharge the first node to a ground potential. The first node receives a second clock signal through a second capacitor. Negative electric charges are pumped out to the second node. A negative bias voltage is generated from the second node with an improved efficiency and reliability.
申请公布号 US5394365(A) 申请公布日期 1995.02.28
申请号 US19930045069 申请日期 1993.04.12
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 TSUKIKAWA, YASUHIKO
分类号 H01L21/8238;G11C5/14;G11C11/408;H01L27/02;H01L27/092;H02M3/07;(IPC1-7):G11C5/14 主分类号 H01L21/8238
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