发明名称 |
Semiconductor memory device containing junction field effect transistor |
摘要 |
The miniaturization of junction field effect transistors constituting memory cells and higher integration of a dynamic semiconductor memory device are attained. Word lines composed of a p-type impurity diffusion layer are formed on an n-type silicon substrate. An n-type impurity diffusion layer is formed within the p-type impurity diffusion layer. The n-type impurity diffusion layer constitutes two source-drain regions and a channel region, and the p-type impurity diffusion layer constitutes a gate region in each junction field effect transistor. The diffusion layer depth of the channel region is less than that of the source-drain regions. Bit lines are connected to one source-drain region, and storage nodes are connected to the other source-drain region. Each capacitor is made of a storage node, a dielectric film and a cell plate electrode. |
申请公布号 |
US5393998(A) |
申请公布日期 |
1995.02.28 |
申请号 |
US19930065334 |
申请日期 |
1993.05.21 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
ISHII, TATSUYA;SHINOHARA, TATSUO |
分类号 |
H01L27/10;G11C11/404;H01L21/337;H01L27/108;H01L29/10;(IPC1-7):H01L29/80;H01L31/112;G11C11/24 |
主分类号 |
H01L27/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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