SiC power MOSFET device structure

摘要

A MOSFET (100) device having a silicon carbide substrate (102) of a first conductivity type. A first epitaxial layer (104) of said first conductivity type and a second epitaxial layer (106) of a second conductivity type are located on a top side of the substrate (102). An insulator layer (108) separates gate electrode (112) from second epitaxial layer (106). A drift region (118) of the first conductivity type is located within the second epitaxial layer (106) on the first side of the gate electrode (112). The drift region has an extension which extends through the second epitaxial layer (106) to the first epitaxial layer (104). Source regions (116) and body contact regions (122) are located within the second epitaxial layer (106) on the second side of the gate electrode (112). Source regions (116,) and body contact regions (122) are of opposite conductivity type. Source electrode (126) electrically connects source regions (116) and body contact regions (122 ). A drain electrode (128) is located on a bottom side of the substrate.