| 摘要 |
A method of forming field oxide isolation regions for submicron technology using oxygen implantation is described. A first insulating layer is formed over a silicon substrate. A second insulating layer is formed over the first insulating layer. A first opening is formed in the first and second insulating layers. Sidewall spacers are formed on the vertical surfaces of the first and second insulating layers, within the first opening, to define a second, smaller opening. A portion of the silicon substrate is removed in the region defined by the second, smaller opening, to form an etched region of the silicon substrate. The sidewall spacers are removed. Oxygen is implanted into the etched region of the silicon substrate and into the region of the silicon substrate under the former location of the sidewall spacers. A portion of the polycrystalline silicon in and above the etched region of the silicon substrate. The field oxide isolation region is formed by heating. The remainder of the first and second insulating layers are removed.
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