发明名称 HIGH OFF-GATE GAIN GTO THYRISTOR
摘要 <p>The thyristor is divided into a main transistor and a sub-transistor, and the latter has a diode as a main current shunt and a base resistor. Another thyristor structure comprises three transistors and a base resistor inserted into this three-transistor circuit. The off-gate gain is as great as 10,000 times that of conventional thyristors, its operation principle is simple, and the production is easy. The thyristor can be applied to a bipolar switch device capable of shutting off a large direct current by a very small signal.</p>
申请公布号 WO1995005706(P1) 申请公布日期 1995.02.23
申请号 JP1993001139 申请日期 1993.08.12
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