| 摘要 |
<p>PURPOSE:To alleviate an internal stress due to soldering and to suppress a decrease in antioxidation performance due to a crack by suppressing the diffusion of tin in a copper layer by interposing a lead layer between a bump of copper and a soldering layer of its surface. CONSTITUTION:A metal layer is deposited on an insulating film 2 provided on a semiconductor substrate 1, and selectively etched to form an electrode pad 3. An interlayer insulating film 4 is provided, a first opening 5 is formed on the pad 3, and, first and second metal layers 6, 7 are sequentially deposited on the surface. Then, a photoresist film 8 is provided, patterned, and a second opening 9 slightly larger than the opening 5 is formed. A copper layer is deposited on the layer 7 of the opening 9 by an electrically plating method, and a bump 10 is formed on the film 8. A lead layer 11 is plated on the bump 10. and a solder plating layer 12 is formed on the surface. With the bump 10 as a mask the layers 6, 7 are sequentially etched and removed.</p> |
