MANUFACTURING PROCESS FOR LARGE SILICON-GATE MOS INTEGRATED CIRCUITS,申请号SU19925034338-传众专利搜索

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发明名称	MANUFACTURING PROCESS FOR LARGE SILICON-GATE MOS INTEGRATED CIRCUITS
摘要
申请公布号	RU2029414(C1)	申请公布日期	1995.02.20
申请号	SU19925034338	申请日期	1992.03.26
申请人	NAUCHNO-ISSLEDOVATELSKIJ INSTITUT ELEKTRONNOJ TEKHNIKI	发明人	MESHCHERYAKOV NIKOLAJ YAKOVLEVICH;TSYBIN SERGEJ ALEKSANDROVICH
分类号	H01L21/82;(IPC1-7):H01L21/82	主分类号	H01L21/82
代理机构		代理人
主权项
地址

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