发明名称 |
MOSFET-Transistor mit nicht-gleichmässiger Schwellspannung im Kanalbereich. |
摘要 |
A MOSFET transistor, in which source and drain regions are formed at a certain distance away from each other in a surface area of a semiconductor substrate having a first conductivity type, and a gate electrode is formed on the surface of the substrate through a gate insulating film formed thereon between the source and drain regions, and in which a channel region located in the surface area of the substrate between the source and drain regions is composed of different concentration regions, and a threshold voltage of a high concentration channel region is lower than that of a low concentration channel region. |
申请公布号 |
DE69015666(D1) |
申请公布日期 |
1995.02.16 |
申请号 |
DE1990615666 |
申请日期 |
1990.03.09 |
申请人 |
KABUSHIKI KAISHA TOSHIBA, KAWASAKI, KANAGAWA, JP |
发明人 |
YOSHIDA, MASAYUKI, KAWASAKI-SHI, KANAGAWA-KEN, JP |
分类号 |
H01L29/78;H01L29/10;H01L29/49 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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