Dynamic isolation circuit for integrated circuits.

摘要

The present invention relates to a dynamic isolation circuit forming part of a monolithic integrated circuit comprising lateral transistors and vertical transistors, the lateral transistors being insulated by an insulation region connected to an insulation potential (Vins), these lateral transistors being connected to voltages of a first polarity with respect to the reference voltage (GND), the power terminal connected to the rear face normally being at a potential (Vout) of the first polarity with respect to the reference voltage. This circuit comprises means for detecting (D) the sign of the potential of the rear face with respect to the reference voltage, at least one lateral transistor (S1) for linking the insulation potential to the reference potential when the potential of the rear face is of the first polarity with respect to the reference potential, and at least one vertical transistor (S2) for linking the insulation potential to the potential of the rear face when the potential of the rear face is of the second polarity with respect to the reference potential.