发明名称 PARALLEL TEST CIRCUIT OF SEMICONDUCTOR MEMORY CHIP
摘要 The test method for semiconductor memory cell employs a first comparing means controlled by a first control means; the second comparing means comparing the output of the first comparing means; the selecting means complementally activated to the second control means in order to control the output of the second comparing means; a control means controlling the output buffer hooked on both the output of the selecting means and the first control comparing means. The test method can be used for finding the malfunction cell during the wafer process or the packing process.
申请公布号 KR950001293(B1) 申请公布日期 1995.02.15
申请号 KR19920006727 申请日期 1992.04.22
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 YU, JE - HWAN
分类号 G01R31/26;G01R31/28;G11C11/401;G11C29/00;G11C29/34;G11C29/40;H01L21/66;(IPC1-7):G11C29/00 主分类号 G01R31/26
代理机构 代理人
主权项
地址