Novel TiSi2/TiN clad interconnect technology.

摘要

A TiSi2/TiN clad LI strap process and structure are disclosed which combine the advantages of both TiSi2 and TiN LI processes. According to the invention, the retention of a thin TiN layer (12) between the local interconnect (e.g. TiSi2 14) and contacts (e.g. TiSi2 16) provides a diffusion barrier against counterdoping and relaxes the thermal budget for subsequent processing.