Polishing pad and a process for polishing.

摘要

The present invention includes a modified polishing pad (62) and methods on how to form and used the polishing pad (62). In one embodiment, a modified polishing pad (62) is formed similar to polishing substrates (14) except that the modifying pressure should be large enough to mechanically deform part of the polishing pad (62) . The modifying pressure is typically at least 10 pounds per square inch. The materials used to modify the pad should be hard with a smooth surface. Examples of these materials are metals, dielectrics, and semiconductors. After modifying the polishing pad (62), it may be used to polishing semiconductor substrates (14). Compared to a fresh pad, the modified polishing pad (62) should be have a higher planarization efficiency and be less likely to cause corner rounding of a patterned layer (33) adjacent to an opening (39).