METHOD OF AND APPARATUS FOR CUTTING INTERCONNECTION PATTERN WITH LASER

摘要

In an interconnection film cutting method and apparatus therefor according to the present invention, a laser beam (5) having a pulse width of 10<-><9> second or less is illuminated on a desired portion of the interconnection pattern of a semiconductor device (8), such as a link used for redundant operation of a defective bit in, for example, a LSI memory, or on a desired portion of the interconnection pattern of a large-scaled interconnection substrate through a transmission type liquid crystal mask in the form of a desired pattern so as to cut the interconnection pattern without damaging a layer disposed below the interconnection pattern.