| 摘要 |
PURPOSE:To improve trigger photosensitivity, by laminating the first - third semiconductor layers in an n-type semiconductor for a base one by one, and making forbidden band widths of a p-type semiconductor for anode as well as an n-type semiconductor for cathode layer larger than those of the first and third semiconductor layers and making the forbidden band width of the second semiconductor layer narrow. CONSTITUTION:As to an n-type semiconductor for a base, the first, second, and third semiconductor layers 44, 45, and 46 are laminated one by one. Then, this element makes the forbidden band widths of a p-type semiconductor for anode 47 and an n-type semiconductor for cathode 42 larger than either of those of the first and third semiconductor layers 44 and 46 and further, makes the forbidden band width of the second semiconductor layer 45 narrower than those of the first and third semiconductor layers 44 and 46. The state of a forward direction continuity, that is, the state of ON is induced by causing lights to be absorbed by the n-type semiconductor for the base and electrons as well as positive holes are relaxed in the second semiconductor layer 45. Thus, induced emission processes of the electrons as well as the positive holes make a laser oscillate to improve trigger sensitivity. |
