| 摘要 |
PURPOSE:To form a microminiaturized semiconductor gas-sensor element with good mass-productivity, by cutting one of two wires of metallic electrodes near the metal oxide semiconductor, and connecting each terminal of wires of three metallic electrodes with three electrode plates on the electrode supporting substrate respectively. CONSTITUTION:Straight wires 11, 12 of metallic oxide are set perpendicularly in grade separation and metal oxide semiconductor 13 is formed by sintering at the part of grade separation. A throgh-hole 15 is formed at the center of the supporting substrate 14 of electrodes so as not to contact the metal oxide semiconductor 13 with the supporting substrate 14. Each of electrode plates 16a-16d is provided to the corner of the substrate 14 respectively, and each of the terminal parts of these wires 11, 12 of metallic electrodes is connected and fixed by a suitable joining method like soldering. Then a part of the wire of electrode 12 is cut off from the wire L1, L2 near the metal oxide semiconductor 13. An element 10 is considered that the wire of metallic electrode itself is the inner load, and moreover the inner load can be chosen according to use. |
