| 摘要 |
<p>A semiconductor memory device includes a plurality of bit lines (301, 302) formed on an interlayer insulation film (17) and arranged with a first pitch (P1) defining a distance between neighboring bit lines, and word lines (241 - 243) which are formed on an insulation film (23) formed on the bit lines (301, 302) and which are arranged with a second pitch defining a distance between neighboring word lines. One of the bit and word lines which has a relatively wide pitch (P2) comprises an aluminum-based metallization film, and the other line (301, 302) which has a relatively narrow pitch (P1) comprises a refractory metal silicide-based metallization film (211, 221).</p> |
