Semiconductor device and manufacturing method.

摘要

In the manufacture of a semiconductor device, a first semiconductor wafer is provided with circuitry therein. A layer of spin-on glass material is deposited on the wafer. Then a second semiconductor wafer is placed on the spin-on glass material. The structure is then heated to cure the spin-on glass material. Further circuitry may then be formed in the second semiconductor wafer. Preferably, the spin-on glass forms a cross-linked siloxane polymer, which may be a poly-organo-siloxone having a carbon content of at least 5 per cent.