发明名称 |
Method for forming an integrated circuit pattern on a semiconductor substrate, using an anti-reflective layer. |
摘要 |
Reflective notching of a photoresist pattern (20), generated over reflective materials on a semiconductor substrate (12), is minimized by using an anti-reflective layer (20) of silicon-rich silicon nitride. The layer of silicon-rich silicon nitride is formed over the reflective materials and a layer of photoresist is then formed over the silicon-rich silicon nitride. The photoresist layer is then photolithographically patterned to form an integrated circuit pattern (20). The silicon-rich silicon nitride layer has an absorptive index of greater than 0.25, which allows it to be used as an anti-reflective layer with photolithographic patterning systems having ultraviolet and deep ultraviolet exposure wavelengths. |
申请公布号 |
EP0638922(A1) |
申请公布日期 |
1995.02.15 |
申请号 |
EP19940109689 |
申请日期 |
1994.06.23 |
申请人 |
MOTOROLA, INC. |
发明人 |
ROMAN, BERNARD J.;NGUYEN, BICH-YEN;RAMIAH, CHANDRASEKARAM |
分类号 |
G03F7/11;G03F7/09;G03F7/20;H01L21/027 |
主分类号 |
G03F7/11 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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