| 摘要 |
This photorefractive device, intended to be exposed to a write beam (radiation) designed to create an interference-fringe grating in the device and to a read beam which the grating created defracts, comprises an electrooptic material having a multiple-quantum-well structure (2; 24) and being formed in an intrinsic semiconductor matrix (8; 22, 26) and, on each side of the material, within the semiconductor matrix, means (4, 6; 28, 30) which are capable of trapping, both parallel to the axis of the structure and perpendicularly to this axis, the free carriers generated by the write beam. Application to optical telecommunications. <IMAGE> |
