发明名称 Reference switching circuit for flash EPROM
摘要 A circuit for switching the source regions of reference devices used in a flash EPROM from ground potential to a potential of 3.5 volts during programming. This prevents charging of the floating gates of the reference devices on the selected word line and the discharging of the floating gates of the reference devices on the non-selected word lines.
申请公布号 US5390146(A) 申请公布日期 1995.02.14
申请号 US19940192182 申请日期 1994.02.03
申请人 INTEL CORPORATION 发明人 ATWOOD, GREGORY E.;JUNGROTH, OWEN W.
分类号 G11C17/00;G11C16/04;G11C16/10;G11C16/28;H01L21/8247;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):G11C11/34;G11C7/02 主分类号 G11C17/00
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