| 摘要 |
PURPOSE:To enhance a semiconductor storage device in operating margin and reliability by a method wherein bit lines are lessened in capacity between them so as to decrease noises induced between them due to capacitive coupling. CONSTITUTION:Pairs of bit lines 24a formed of a first Al film are alternately connected to sense amplifiers 25 and arranged on every other line along a memory cell array. Pairs of bit lines 24b formed of a third Al film are connected to every other sense amplifier 25 where no bit line 24a is connected and arranged on every other line where no bit line 24a is disposed along the memory cell array. Therefore, the bit lines 24a and the bit lines 24b are both wide in space between themselves respectively, and the bit lines 24a and 24b are also wide in space between them. |
