| 摘要 |
A bipolar transistor is provided in which the emitters do not traverse the base but terminate inside the top surface of the base. Each emitter is L-shaped in some embodiments. The base top surface has a polygonal or circular outer boundary. The transistor has a long emitter perimeter available for base current flow and more than two emitter sides (e.g., five sides) available for base current flow. Further, the transistor has a large ratio of the emitter area to the base area. Consequently, the transistor has low noise, high gain, high frequency range, and a small size.
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